Silicon RF Power MOSFET Power Transistor, 175 MHz, 530 MHz, 70W
Silicon RF Power MOSFET Power Transistor, 175 MHz, 530 MHz, 70W
Silicon RF Power MOSFET Power Transistor, 175 MHz, 530 MHz, 70W
Silicon RF Power MOSFET Power Transistor, 175 MHz, 530 MHz, 70W

TPL COMMUNICATIONS

Silicon RF Power MOSFET Power Transistor, 175 MHz, 530 MHz, 70W

$ 1,940.08
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Descripción

DESCRIPTION

RD70HUF2 is MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

FEATURES

  • Supply with Tape and Reel. 500 Units per Reel
  • Employing Mold Package
  • High Power and High Efficiency
  • Pout=75Wtyp, Drain Effi.=64%typ
    @ Vds=12.5V Idq=1.0A Pin=5.5W f=530MHz
  • Pout=84Wtyp, Drain Effi.=74%typ
    @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
  • Integrated gate protection diode

APPLICATION

For output stage of high power amplifiers in VHF/UHF band mobile radio sets.

RoHS COMPLIANT

RD70HUF2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders.

However, it is applicable to the following exceptions of RoHS Directions.

  • Lead in high melting temperature type solders. (i.e. tin-lead solder alloys containing more than 85% lead.)
Características Clave
  • Transistor MOSFET de potencia RF
  • Frecuencias 175 MHz y 530 MHz
  • Potencia 70W con alta eficiencia
  • Diseño de alta eficiencia energética
  • Diodo de protección integrado en la puerta
  • Cumple con estándares RoHS

Pairs well with

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